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APT5040KFLL
500V 17A 0.400
POWER MOS 7
(R)
R
FREDFET
TO-220
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
G
D
S
* Increased Power Dissipation * Easier To Drive * TO-220 Package * FAST RECOVERY BODY DIODE
D G S
All Ratings: TC = 25C unless otherwise specified.
APT5040KFLL UNIT Volts Amps
500 17 68 30 40 250 2 -55 to 150 300 17 16
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
425
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
500 0.40 250 1000 100 3 5
(VGS = 10V, 8.5A)
Ohms A nA Volts
10-2003 050-7169 Rev -
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT5040KFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 17A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 250V ID = 17A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 333V, VGS = 15V ID = 17A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 333V VGS = 15V ID = 17A, RG = 5
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
1006 234 16 26 8 14 9 4 18 2 73 26 198 47
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns
17 68 1.3 15
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -ID 17A)
5
dv/
t rr
Reverse Recovery Time (IS = -ID 17A, di/dt = 100A/s, VR = 333V) Reverse Recovery Charge (IS = -ID 17A, di/dt = 100A/s, VR = 333V) Peak Recovery Current (IS = -ID 17A, di/dt = 100A/s, VR = 333V) Characteristic Junction to Case Junction to Ambient
212 272 853 1299 7.8 9
TYP
280 350 1110 1690 10 12
MAX
Q rr IRRM
C
Amps
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
.50 TBD
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.60
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 2.94mH, RG = 25, Peak IL = 17A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID17A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.50 0.9 0.40 0.7 0.30 0.5 0.20 0.3 0.10 0.1 0 10-5 0.05 10-4 SINGLE PULSE Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
10-2003
050-7169 Rev -
Z
JC
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 9a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Typical Performance Curves
35 30 25 VGS=15 &10V
APT5040KFLL
ID, DRAIN CURRENT (AMPERES)
6.5V 6V 20 15 10 5 0 02 4 6 8 10 12 14 16 18 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 5.5V
RC MODEL Junction temp (C) 0.216 C/W Power (watts) 0.284 C/W Case temperature (C) 0.0553 J/C 0.00367 J/C
5V 4.5V 4V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
40
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
1.40
NORMALIZED TO V = 10V @ 8.5A
GS
ID, DRAIN CURRENT (AMPERES)
30
TJ = -55C
1.30 1.20
20 TJ = +25C 10 TJ = +125C
1.10
VGS=10V VGS=20V
1.00 0.90 0.80 0 5 10 15 20 25 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 18 16
ID, DRAIN CURRENT (AMPERES)
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.10 1.05 1.00
14 12 10 8 6 4 2 0 25
0.95
0.90 0.85 -50
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
2.5
I V
D
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
= 8.5A = 10V
2.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
1.1 1.0 0.9 0.8 0.7
1.5
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.6 -50
050-7169 Rev -
10-2003
Typical Preformance Curves
68
OPERATION HERE LIMITED BY RDS (ON)
APT5040KFLL
4,000
ID, DRAIN CURRENT (AMPERES)
1,000 10 5 100S
C, CAPACITANCE (pF)
Ciss
Coss 100
1mS 1 10mS TC =+25C TJ =+150C SINGLE PULSE .1 1 10 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
Crss 10 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
16
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
= 17A
100 50
14 12 10 VDS=250V 8 6 4 2 10 15 20 25 30 35 40 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 30 25 td(off) 0 0 5 VDS=400V VDS=100V
TJ =+150C 10 5
TJ =+25C
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 50
V
DD G
= 333V
R
= 5
40
V
DD G
T = 125C
J
L = 100H
td(on) and td(off) (ns)
20
= 333V
R
= 5
tr and tf (ns)
30 tf 20
T = 125C
15
J
L = 100H
10 td(on) 5 0 0 10 15 20 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
10
tr
0 5 10 15 20 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 300 250 Eon
SWITCHING ENERGY (J)
0
5
250
= 333V
R
= 5
SWITCHING ENERGY (J)
200
T = 125C
J
Eon
L = 100H E ON includes diode reverse recovery.
200
150
150 100
V = 333V
100
10-2003
Eoff
DD
I
D J
= 17A
50
T = 125C
Eoff
50 0
050-7169 Rev -
L = 100H E ON includes diode reverse recovery.
0
0
4
8
12
16
20
ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
Typical Performance Curves
APT5040KFLL
Gate Voltage
10 % T = 125 C J td(on) tr 5% 90% 10 % 5%
Switching Energy Drain Voltage Drain Current
90%
Gate Voltage
t
T = 125 C J
d(off) Drain Voltage
90%
10% tf
Switching Energy
0
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF60B
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-220AC Package Outline
1.39 (.055) 0.51 (.020)
Drain
10.66 (.420) 9.66 (.380) 5.33 (.210) 4.83 (.190) 6.85 (.270) 5.85 (.230)
16.51 (.650) 14.23 (.560)
3.42 (.135) 2.54 (.100)
4.08 (.161) Dia. 3.54 (.139)
6.35 (.250) MAX. 14.73 (.580) 12.70 (.500)
0.50 (.020) 0.41 (.016) 2.92 (.115) 2.04 (.080) 4.82 (.190) 3.56 (.140)
Gate
1.01 (.040) 3-Plcs. 0.38 (.015) 2.79 (.110) 2.29 (.090) 5.33 (.210) 4.83 (.190)
1.77 (.070) 3-Plcs. 1.15 (.045)
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7169 Rev -
10-2003
Drain Source

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